The non-ideal current-voltage effects such as velocity saturation, mobility degradation, body effect, and the channel length modulation CLM are explained. Velocity Saturation At the high lateral electric field Elat that is equal to Vds/L, the velocity of the carrier ceases to increase linearly with the field strength is called Velocity saturation. The velocity saturation results in lower Ids that which is expected at High Vds. Mobility Degradation At high vertical field strengths Evert that is equal to Vgs/tox, the carriers scatter in the oxide SiO2 interface and the process gets slower is called Mobility degradation. Mobility degradation also reduces the current Ids that are expected at high Vgs. Channel length modulation CLM The saturation current Isat of the non-ideal transistor increases with Vds, which is mainly caused by